GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SINGLE-CRYSTAL ZINC BLENDE MNS

We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., beta-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (similar to 110 degrees C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (alpha-MnS), depending on the growth temperature. (C) 1995 American Institute of Physics.