HIGH-QUALITY, HIGH-RATE SIO2 AND SIN FILMS FORMED BY 400 KHZ BIAS ELECTRON-CYCLOTRON RESONANCE-CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

FUKUDA, T

SAITO, K

OHUE, M

SHIMA, K

MOMMA, N

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

[2] HITACHI LTD,HITACHI WORKS,HITACHI,IBARAKI 317,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7B期

关键词：

PLASMA; CVD; BIAS-CVD; ECR; EXCITED IONS; SIO2; SIN; HIGH RATE; HIGH QUALITY; SI-H BOND-FREE FILM;

D O I：

10.1143/JJAP.34.L937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new electron cyclotron resonance (ECR) plasma CVD system is propos:ed to form high-quality SiO2 and SiN films at high rates. The system applies 400 kHz voltages which ions can follow to the substrate. The system efficiently produces, without heating: 1) SiO2 films in which density and Si-O bond strength are equivalent to those of a thermally oxidized (about 1000 degrees C) film for which deposition rate is higher than 1.2 mu m/min and 2) Si-H bond-free SiN films in which density and resistivity are higher than those of films formed by conventional plasma CVD systems and for which deposition rate is higher than 0.8 mu m/min.

引用

页码：L937 / L940

页数：4

共 8 条

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