SEMICONDUCTOR DOPING BY HIGH ENERGY 1-2.5 MEV ION IMPLANTATION

被引：29

作者：

ROOSILD, S

DOLAN, R

BUCHANAN, B

机构：

[1] Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 03期

关键词：

D O I：

10.1149/1.2411148

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The formation of junctions in silicon through the use of mono-energetic ions in the energy range from 1 to 2.5 Mev has been studied. Boron, nitrogen, and phosphorous ions were used. Results are presented on the annealing temperatures required to place these ions in substitutional states and on the distribution of these ions in the host material. A way for localized masking against the ion beam, to obtain planar structures, is also discussed. © 1968, The Electrochemical Society, Inc. All rights reserved.

引用

页码：307 / &