SEMIEMPIRICAL CALCULATIONS OF HYDROGEN DEFECTS IN SILICON

被引：27

作者：

SINGH, VA

CORBETT, JW

WEIGEL, C

ROTH, LM

机构：

来源：

PHYSICS LETTERS A | 1978年 / 65卷 / 03期

关键词：

D O I：

10.1016/0375-9601(78)90169-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：261 / 263

页数：3

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共 8 条

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[2] GERASIMENKO NN, UNPUBLISHED
[3] MOLECULAR-ORBITAL TREATMENT FOR DEEP LEVELS IN SEMICONDUCTORS - SUBSTITUTIONAL NITROGEN AND LATTICE VACANCY IN DIAMOND
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[4] PICRAUX ST, 7TH P INT C AT COLL
[5] PICRAUX ST, UNPUBLISHED
[6] VIBRATIONAL AND ELECTRONIC-STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY EXTENDED HUCKEL THEORY
SINGH, VA
WEIGEL, C
CORBETT, JW
ROTH, LM
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 81 (02): : 637 - 646
[7] AMORPHOUS SILICON P-N-JUNCTION
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[J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
[8] BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON
STEIN, HJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 159 - 174