PREPARATION OF GRADED-BAND-GAP SINGLE CRYSTALS OF II-VI COMPOUNDS

被引：22

作者：

REIMERS, P

机构：

[1] Institut Für Angewandte Physik, Universität Karlsruhe

来源：

PHYSICA STATUS SOLIDI | 1969年 / 35卷 / 02期

关键词：

D O I：

10.1002/pssb.19690350220

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Graded‐band‐gap single crystals of ZnxCd1−xSe, CdS1−xSex, CdSe1−xSx, Zn1−xCdxS, and ZnxCd1−xSySe1−y with x and y increasing along the direction of growth have been prepared by two different vapor phase methods. Typical crystal dimensions in the systems CdS1−xSex and CdSe1−xSx are 6 × 7 × 20 mm3, in the other systems 2 × 3 × 8 mm3. The gradient of the band gap in the system CdS1−xSex could be varied between 0.1 and 2.0 eV/cm. The change in band gap vs. crystal position was determined by absorption measurements. All crystals show edge emission at liquid air temperature under excitation by uv light. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：707 / &

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