ONE-DIMENSIONAL TO ONE-DIMENSIONAL TUNNELING BETWEEN ELECTRON WAVE-GUIDES

被引：48

作者：

EUGSTER, CC

DELALAMO, JA

ROOKS, MJ

MELLOCH, MR

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] PURDUE UNIV,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of controlled electron tunnelling between two closely spaced one-dimensional (1D) electron waveguides implemented using a split-gate scheme on a high mobility AlGaAs/GaAs heterostructure. The 1D to 1D tunnelling current shows a distinct bumpy pattern when the electronic subband population in the two waveguides is modulated. These results are consistent with a picture in which tunnelling primarily occurs when the 1D subbands in both waveguides line up in energy as expected from energy and momentum conservation rules.

引用

页码：3157 / 3159

页数：3

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