CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - COMMENT

被引：3

作者：

COHEN, JD

LEEN, TM

机构：

[1] Department of Physics, University of Oregon, Eugene

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.73.366

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by J. W. Farmer and Z. Su, Phys. Rev. Lett. 71, 2979 (1993). © 1994 The American Physical Society.

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页码：366 / 366

页数：1

相关论文

共 6 条

[1] OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

COHEN, JD ;

LEEN, TM ;

RASMUSSEN, RJ .

PHYSICAL REVIEW LETTERS, 1992, 69 (23) :3358-3361

[2] CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

FARMER, JW ;

SU, Z .

PHYSICAL REVIEW LETTERS, 1993, 71 (18) :2979-2982

[3] OPTICAL-BIAS EFFECTS IN ELECTRON-DRIFT MEASUREMENTS AND DEFECT RELAXATION IN A-SIH [J].

HAN, DX ;

MELCHER, DC ;

SCHIFF, EA ;

SILVER, M .

PHYSICAL REVIEW B, 1993, 48 (12) :8658-8666

[4] SPATIALLY RESOLVED AND ENERGY-RESOLVED DEFECT KINETICS IN ALPHA-SI-H - A COMPREHENSIVE STUDY BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS [J].

SCHUMM, G ;

BAUER, GH .

PHYSICAL REVIEW B, 1989, 39 (08) :5311-5326

[5]

TIEDJE T, 1984, SEMICONDUCT SEMIMET, V21, P207

[6] MEASURED AND CALCULATED DISTRIBUTIONS OF DEEP DEFECT STATES IN HYDROGENATED AMORPHOUS-SILICON - VERIFICATION OF DEEP DEFECT RELAXATION DYNAMICS [J].

ZHONG, F ;

COHEN, JD .

PHYSICAL REVIEW LETTERS, 1993, 71 (04) :597-600