DESEGREGATION OF BORON AT THE GRAIN-BOUNDARIES OF THE IN-SITU BORON-DOPED DIAMOND FILMS

被引：15

作者：

HUANG, JT

HU, GS

HWANG, J

CHANG, H

LEE, LJ

机构：

[1] NATL TSING HUA UNIV,DEPT CHEM,HSINCHU,TAIWAN

[2] NATL SCI COUNCIL,CTR PRECIS INSTRUMENT DEV,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality in situ boron doped polycrystalline diamond films were grown on the scratched Si (100) substrate. A saturated deionized water solution of boron acid was chosen as a dopant source. The concentration profiles of boron, tantalum, and oxygen were examined by using scanning Auger nanoprobe and secondary ion mass spectroscopy. The boron atoms are uniformly distributed inside each diamond grain. However, no Auger signal from boron was observed at grain boundaries within the detection limit. Tn contrast, tantalum atoms are uniformly distributed across diamond grains and grain boundaries. A simple model was proposed in explaining the boron desegregation. (C) 1995 American Institute of Physics.

引用

收藏

页码：2382 / 2384

页数：3

相关论文

共 18 条

[1] INVESTIGATION OF BORON AND HYDROGEN CONCENTRATIONS IN P-TYPE DIAMOND FILMS BY INFRARED-SPECTROSCOPY [J].

ERZ, R ;

DOTTER, W ;

JUNG, K ;

EHRHARDT, H .

DIAMOND AND RELATED MATERIALS, 1995, 4 (04) :469-472

[2] PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS [J].

FUJIMORI, N ;

NAKAHATA, H ;

IMAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05) :824-827

[3] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[4] HIGH-TEMPERATURE SCHOTTKY DIODES WITH THIN-FILM DIAMOND BASE [J].

GILDENBLAT, GS ;

GROT, SA ;

HATFIELD, CW ;

BADZIAN, AR ;

BADZIAN, T .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) :371-372

[5] THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].

GROT, SA ;

GILDENBLAT, GS ;

HATFIELD, CW ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102

[6] ELECTRICAL-PROPERTIES OF SELECTIVELY GROWN HOMOEPITAXIAL DIAMOND FILMS [J].

GROT, SA ;

HATFIELD, CW ;

GILDENBLAT, GS ;

BADZIAN, AR ;

BADZIAN, T .

APPLIED PHYSICS LETTERS, 1991, 58 (14) :1542-1544

[7]

HIROSE Y, 1986, JPN J APPL PHYS, V25, P519

[8] DIAMOND DEPOSITION ON CEMENTED CARBIDE BY CHEMICAL VAPOR-DEPOSITION USING A TANTALUM FILAMENT [J].

MATSUBARA, H ;

SAKUMA, T .

JOURNAL OF MATERIALS SCIENCE, 1990, 25 (10) :4472-4476

[9] SYNTHESIS OF DIAMOND THIN-FILMS HAVING SEMICONDUCTIVE PROPERTIES [J].

OKANO, K ;

NARUKI, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

HIROSE, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L173-L175

[10]

OKANO K, 1993, DIAM RELAT MATER, V3, P35