TEMPERATURE-DEPENDENCE OF THE CHARACTERISTICS OF SPUTTERED A-SI-H SOLAR-CELLS

被引：11

作者：

ALKAISI, MM

THOMPSON, MJ

机构：

[1] Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, S1 3JD, Mappin Street

来源：

SOLAR CELLS | 1979年 / 1卷 / 01期

关键词：

D O I：

10.1016/0379-6787(79)90010-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

It is now well established that the properties of hydrogenated amorphous silicon are highly dependent on the preparation conditions. In this paper we describe the Schottky barrier characteristics of cells incorporating a-SiH grown at different substrate temperatures and in various hydrogen partial pressures. The characteristics of the cells in the dark and under illumination are highly dependent on the type of the dominant conduction process. The illuminated cell characteristics are described for cells with efficiencies of 2%. The open-circuit voltage Voc and the short-circuit current Isc are shown to be temperature dependent and the dependence is more pronounced for non-optimum cells than for optimum devices. The spectral response for the cells is also described. © 1979.

引用

页码：91 / 98

页数：8

共 8 条

[1] Spear, Adv. Phys., 26, (1977)
[2] Paul, Lewis, Connell, Moustakas, Solid State Commun., 20, (1976)
[3] Thompson, Allison, Alkaisi, Thomas, R.F. sputtered amorphous silicon schottky Barrier solar cells, Revue de Physique Appliquée, 13, (1978)
[4] Austin, Richards, Searle, Thompson, Alkaisi, Thomas, Allison, Proc. Conf. on the Physics of Semiconductors, (1978)
[5] Thompson, Alkaisi, Allison, Proc. Int. Photovoltaics Conf., (1979)
[6] Allan, Philos. Mag. B., 38, 4, (1978)
[7] Anderson, Moustakas, Paul, Proc. 7th Int. Conf. on Amorphous and Liquid Semiconductors, (1977)
[8] Deneuville, Brodsky, J. Appl. Phys., 50, 3, (1979)

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