LASER-DIODE-PUMPED CR-LISRGAF6 LASER

被引：8

作者：

SCHEPS, R

机构：

[1] Naval Ocean Systems Center, Code 754, San Diego

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diode-pumped operation of a Cr:LiSrGaF6 laser is described. Efficient performance was obtained between 810 and 855 nm. The maximum output power was 130 mW at 810 nm, and the slope efficiency was 26%. The sample was pumped with a total incident power of 560 mW using two polarization-combined high power visible laser diodes. These results represent the highest CW power reported for a diode-pumped Cr-doped laser.

引用

页码：548 / 550

页数：3

共 15 条

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