VARIABLE-RANGE-HOPPING AND POSITIVE MAGNETORESISTANCE IN INSULATING Y1-XPRXBA2CU3O7 CRYSTALS

被引：36

作者：

JIANG, W

PENG, JL

HAMILTON, JJ

GREENE, RL

机构：

[1] Center for Superconductivity Research, Department of Physics, University of Maryland, College Park

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.49.690

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured in-plane resistivity and magnetoresistance of insulating Y1-xPrxBa2Cu3O7 (x approximately 0.63) crystals in magnetic fields up to 8 T. Mott variable-range-hopping transport rho=rho0 exp{(T0/T)alpha} has been observed with alpha=1/4 at low temperatures suggesting the metal-insulator transition caused by Pr doping is due to carrier localization. The magnetoresistance in the Mott variable-range-hopping regime is found to be positive and anisotropic, which may be caused by a decrease of the localiztion length induced by the magnetic field.

引用

页码：690 / 693

页数：4

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