SURFACE-MORPHOLOGY INDUCED BY GA AND SN OVERLAYERS ON SI(100) AND SI(311) SURFACES

The development of surface reconstructions and facets on Si (100)-(2XI) and Si (311)-(3×2) was followed as a function of Ga and Sn coverages and annealing temperatures. When the Ga coverage on Si (100) exceeded 1 monolayer (ML), rectangular and square depressions shaped like inverted pyramids were formed on the Si (100)-(z X8)Ga surface. The walls of the inverted pyramids were (311) facets. Deposition of Sn on Si (100) at coverages exceeding 2 ML also produced (311) facets, but they formed the faces of long parallel and orthogonal prisms, giving rise to a large scale mazelike structure on the surface. Deposition of Ga on Si (311) produced ordered (211) and (611) facets at coverages above 1 ML. On the other hand, deposition of Sn on Si (311) did not produce any facet. Layer-by-layer growth of (1×1) pseudomorphic Sn was observed on the Si (311) surface up to 6 ML. © 1995, American Vacuum Society. All rights reserved.