SI(111)ROOT-3 X ROOT-3-AU GROWING ON A 7 X 7 SURFACE

被引：27

作者：

SHIBATA, A

KIMURA, Y

TAKAYANAGI, K

机构：

[1] Tokyo Institute of Technology, Material Science and Engineering, Midori-ku, Yokohama, 227

来源：

SURFACE SCIENCE | 1992年 / 273卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(92)90265-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Restructuring of the Si(111)7 x 7 surface upon deposition of Au at a substrate temperature ranging from 200 to 280-degrees-C is studied by scanning tunneling microscopy (STM). In this temperature range, a square-root 3 x square-root 3 structure is formed at steps and on terraces of the 7 x 7 surface, while the 5 x 2 structure is formed above 320-degrees-C. The square-root 3 x square-root 3 structure nucleated on the terrace produces hole-island pairs due to restructuring of the Si surface layer from the 7 x 7 to the square-root 3 x square-root 3 structure. The number density of Si atoms which compose the square-root 3 x square-root 3 structure is found to be about 1 ML from the analysis of the hole-island pairs.

引用

页码：L430 / L434

页数：5

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