DELAY TIME MEASUREMENT IN TRANSITION-METAL OXIDE GLASS DEVICES

被引:2
作者
REGAN, M [1 ]
DRAKE, CF [1 ]
机构
[1] STANDARD TELECOMM LABS LTD,HARLOW,ESSEX,ENGLAND
关键词
D O I
10.1109/T-ED.1973.17621
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:144 / 149
页数:6
相关论文
共 8 条
[1]  
CHAKRAVARTI IM, 1967, HDB METHODS APPLIED, V1
[2]  
Collins F. M., 1970, Journal of Non-Crystalline Solids, V2, P496, DOI 10.1016/0022-3093(70)90163-8
[3]  
DRAKE CF, 1969, PHYS STAT SOL, V32, P192
[4]  
EVANS DJ, 1970, J NONCRYST SOLIDS, V2, P334
[5]   CHARGE CONDITIONED SWITCHING MECHANISM IN GLASS SEMICONDUCTORS [J].
HABERLAND, DR .
SOLID-STATE ELECTRONICS, 1970, 13 (02) :207-+
[6]  
Shanefield D., 1970, Journal of Non-Crystalline Solids, V2, P382, DOI 10.1016/0022-3093(70)90153-5
[7]  
Shanks R. R., 1970, Journal of Non-Crystalline Solids, V2, P504, DOI 10.1016/0022-3093(70)90164-X
[8]  
Stocker H. J., 1970, Journal of Non-Crystalline Solids, V4, P523, DOI 10.1016/0022-3093(70)90088-8