RANGES AND RANGE THEORIES

[1] RANGES IN SILICON OF IONS WITH ATOMIC NUMBERS 62 LESS-THAN-OR-EQUAL-TO Z-1 LESS-THAN-OR-EQUAL-TO 66 AT 100 KEV [J]. PHYSICS LETTERS A, 1976, 56 (05) : 371 - 373

[2] BERTHOLD J, 1978, THESIS MPI KERNPHYSI

[3] BIERSACK JP, HMI REPORT

[4] HEAVY-ION RANGES IN ALUMINUM AND SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 149 - &

[5] ECKARDT JR, UNPUBLISHED

[6] FASTRUP B, 1966, MAT FYS MEDD, V36, P10

[7] RANGE PARAMETERS OF HEAVY-IONS AT 10 AND 35 KEV IN SILICON [J]. PHYSICS LETTERS A, 1975, A 51 (03) : 165 - 166

[8] ION-BEAM STUDIES .1. RETARDATION OF ION-BEAMS TO VERY LOW ENERGIES IN AN IMPLANTATION ACCELERATOR [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 135 (01): : 1 - 11

[9] Born-Mayer interatomic potential for atoms with Z=2 to Z=36 [J]. CHEMICAL PHYSICS LETTERS, 1970, 7 (03) : 360 - 362

[10] GIBBONS JF, 1975, PROJECTED RANGE STAT

[1] RANGES IN SILICON OF IONS WITH ATOMIC NUMBERS 62 LESS-THAN-OR-EQUAL-TO Z-1 LESS-THAN-OR-EQUAL-TO 66 AT 100 KEV [J]. PHYSICS LETTERS A, 1976, 56 (05) : 371 - 373

[2] BERTHOLD J, 1978, THESIS MPI KERNPHYSI

[3] BIERSACK JP, HMI REPORT

[4] HEAVY-ION RANGES IN ALUMINUM AND SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 149 - &

[5] ECKARDT JR, UNPUBLISHED

[6] FASTRUP B, 1966, MAT FYS MEDD, V36, P10

[7] RANGE PARAMETERS OF HEAVY-IONS AT 10 AND 35 KEV IN SILICON [J]. PHYSICS LETTERS A, 1975, A 51 (03) : 165 - 166

[8] ION-BEAM STUDIES .1. RETARDATION OF ION-BEAMS TO VERY LOW ENERGIES IN AN IMPLANTATION ACCELERATOR [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 135 (01): : 1 - 11

[9] Born-Mayer interatomic potential for atoms with Z=2 to Z=36 [J]. CHEMICAL PHYSICS LETTERS, 1970, 7 (03) : 360 - 362

[10] GIBBONS JF, 1975, PROJECTED RANGE STAT