INJECTION ELECTROLUMINESCENCE AT P-N JUNCTIONS IN ZINC-DOPED GALLIUM PHOSPHIDE

被引：38

作者：

STARKIEWICZ, J

ALLEN, JW

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(62)90145-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：881 / &

共 10 条

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MIKULYAK, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &
[5] ANALYSIS OF P-N LUMINESCENCE IN ZN-DOPED GAP
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KOELMANS, H
[J]. PHYSICAL REVIEW, 1961, 123 (06): : 1939 - &
[6] GRIMMEISS HG, 1960, PHILIPS RES REP, V15, P290
[7] INJECTED LIGHT EMISSION OF SILICON CARBIDE CRYSTALS
LEHOVEC, K
ACCARDO, CA
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[J]. PHYSICAL REVIEW, 1951, 83 (03): : 603 - 607
[8] BIMOLECULAR ELECTROLUMINESCENT TRANSITIONS IN GAP
LOEBNER, EE
POOR, EW
[J]. PHYSICAL REVIEW LETTERS, 1959, 3 (01) : 23 - 25
[9] ULLMAN FG, 1961, NATURE LOND, V190, P162
[10] WOLFF GA, 1958, HALBLEITER PHOSPHORE