PHOTOLUMINESCENCE AND PHOTOCURRENT STUDIES OF INTERFACIAL DEFECTS AT THE INP/1M KCL ELECTROLYTE JUNCTION

被引：2

作者：

PARK, K ^{[1
]}

NEFF, H ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100553

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：764 / 765

页数：2

共 6 条

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[5] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

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