EFFECT OF A TRANSVERSE MAGNETIC-FIELD ON THE TUNNEL CURRENT THROUGH THICK AND LOW SEMICONDUCTOR BARRIERS

被引:70
作者
GUERET, P
BARATOFF, A
MARCLAY, E
机构
[1] IBM, Rueschlikon, Switz, IBM, Rueschlikon, Switz
来源
EUROPHYSICS LETTERS | 1987年 / 3卷 / 03期
关键词
D O I
10.1209/0295-5075/3/3/019
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
9
引用
收藏
页码:367 / 372
页数:6
相关论文
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