HIGH-TEMPERATURE PASSIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE

被引：158

作者：

NARUSHIMA, T

GOTO, T

HIRAI, T

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1989年 / 72卷 / 08期

关键词：

D O I：

10.1111/j.1151-2916.1989.tb07658.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1386 / 1390

页数：5

共 38 条

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