FEMTOSECOND OPTICAL SPECTROSCOPY IN A-SI-H AND ITS ALLOYS

被引：15

作者：

MOURCHID, A

VANDERHAGHEN, R

HULIN, D

TANGUY, C

FAUCHET, PM

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES LAB,CNRS,UPR A0258,F-91128 PALAISEAU,FRANCE

[2] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90657-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：582 / 584

页数：3

共 6 条

[1] EXTENDED STATE MOBILITY IN A-SI-H MEASURED BY FEMTOSECOND SPECTROSCOPY [J].

FAUCHET, PM ;

MOURCHID, A ;

HULIN, D ;

TANGUY, C ;

VANDERHAGHEN, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :564-566

[2] ULTRAFAST CARRIER RELAXATION IN HYDROGENATED AMORPHOUS-SILICON [J].

FAUCHET, PM ;

HULIN, D .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1989, 6 (05) :1024-1029

[3]

FAUCHET PM, 1986, PHYS REV LETT, V57, P2439

[4] FREE-CARRIER AND TEMPERATURE EFFECTS IN AMORPHOUS-SILICON THIN-FILMS [J].

TANGUY, C ;

HULIN, D ;

MOURCHID, A ;

FAUCHET, PM ;

WAGNER, S .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :880-882

[5]

TAUC J, 1984, SEMICONDUCT SEMIMET, V21, P299

[6]

Tiedje T., 1984, SEMICONDUCTORS SEM C, V21

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