THERMOINDUCED AND PHOTOINDUCED REACTIONS OF NO ON SI(111)7X7 .3. PHOTOREACTION MECHANISMS

被引：33

作者：

YING, ZC

HO, W

机构：

[1] CORNELL UNIV, ATOM & SOLID STATE PHYS LAB, ITHACA, NY 14853 USA

[2] CORNELL UNIV, CTR MAT SCI, ITHACA, NY 14853 USA

来源：

JOURNAL OF CHEMICAL PHYSICS | 1990年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.459199

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The relative yield of photoinduced desorption from NO-exposed Si(111)7 x 7 has been measured as a function of photon power, wavelength, polarization, incident angle, and coverage of coadsorbed potassium. The results are analyzed in terms of two possible mechanisms: direct photoelectronic excitation of the NO-surface complex and interaction of hot carriers photogenerated in the substrate with the NO-surface complex. The substrate-mediated mechanism is found to be principally responsible for the photoreactions.

引用

页码：9089 / 9095

页数：7

共 42 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].