EFG, THE INVENTION AND APPLICATION TO SAPPHIRE GROWTH

[1] [Anonymous], 1970, [No title captured], Patent No. 3527574

[2] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS [J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (08) : 731 - &

[3] La Belle H.E., 1969, US Patent, Patent No. [3,471,266, 3471266]

[4] LABELLE H, 1972, Patent No. 3701636

[5] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (07) : 581 - &

[6] LABELLE HE, 1972, Patent No. 3650703

[7] LABELLE HE, 1971, Patent No. 3591348

[8] LABELLE HE, 1975, Patent No. 3915662

[9] LABELLE HE, 1974, Patent No. 3846082

[10] MLAVSKY AI, 1970, WHISKER TECHNOLOGY, P121

[1] [Anonymous], 1970, [No title captured], Patent No. 3527574

[2] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS [J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (08) : 731 - &

[3] La Belle H.E., 1969, US Patent, Patent No. [3,471,266, 3471266]

[4] LABELLE H, 1972, Patent No. 3701636

[5] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (07) : 581 - &

[6] LABELLE HE, 1972, Patent No. 3650703

[7] LABELLE HE, 1971, Patent No. 3591348

[8] LABELLE HE, 1975, Patent No. 3915662

[9] LABELLE HE, 1974, Patent No. 3846082

[10] MLAVSKY AI, 1970, WHISKER TECHNOLOGY, P121