OXYGEN CONTENT OF SILICON SINGLE CRYSTALS

[1] Bradshaw S.E., 1956, J ELECTRON, V2, P134

[2] BURTON, 1953, J CHEM PHYS, V21, P1987

[3] Coughlin J.P., 1954, BUREAU MINES B, V542

[4] DASH WC, 1955, PHYS REV, V98, P1536

[5] DASH WC, COMMUNICATION

[6] DEBYE PP, 1957, B AM PHYS SOC 2, V2, P66

[7] EMEIS R, 1954, Z NATURFORSCH A, V9, P67

[8] FULLER, 1954, PHYS REV, V96, P833

[9] FULLER, 1955, ACTA METALLURGICA, V3, P97

[10] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[1] Bradshaw S.E., 1956, J ELECTRON, V2, P134

[2] BURTON, 1953, J CHEM PHYS, V21, P1987

[3] Coughlin J.P., 1954, BUREAU MINES B, V542

[4] DASH WC, 1955, PHYS REV, V98, P1536

[5] DASH WC, COMMUNICATION

[6] DEBYE PP, 1957, B AM PHYS SOC 2, V2, P66

[7] EMEIS R, 1954, Z NATURFORSCH A, V9, P67

[8] FULLER, 1954, PHYS REV, V96, P833

[9] FULLER, 1955, ACTA METALLURGICA, V3, P97

[10] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839