HIGH-REFLECTIVITY GESI/SI ASYMMETRIC BRAGG REFLECTOR AT 0.8-MU-M

被引：11

作者：

MURTAZA, S ^{[1
]}

CAMPBELL, J ^{[1
]}

BEAN, JC ^{[1
]}

PETICOLAS, LJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; LASERS; PHOTODETECTORS;

D O I：

10.1049/el:19940205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high reflectivity GeSi/Si Bragg mirror centred at 800 nm is reported. The increased absorption in the GeSi layers at this wavelength is found to be more than compensated for by the increased refractive index step available. Agreement with simulations is excellent. This mirror can be used to fabricate a high quantum efficiency, high speed resonant cavity photodiode.

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页码：315 / 316

页数：2

相关论文

共 12 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[2]

BEAN JC, IN PRESS

[3]

BORN W, 1991, PRINCIPLES OPTICS, P66

[4] HIGH QUANTUM EFFICIENCY, LONG WAVELENGTH INP/INGAAS MICROCAVITY PHOTODIODE [J].

DENTAI, AG ;

KUCHIBHOTLA, R ;

CAMPBELL, JC ;

TSAI, C ;

LEI, C .

ELECTRONICS LETTERS, 1991, 27 (23) :2125-2127

[5] ELECTROLUMINESCENCE AT ROOM-TEMPERATURE OF A SINGEM STRAINED-LAYER SUPERLATTICE [J].

ENGVALL, J ;

OLAJOS, J ;

GRIMMEISS, HG ;

PRESTING, H ;

KIBBEL, H ;

KASPER, E .

APPLIED PHYSICS LETTERS, 1993, 63 (04) :491-493

[6] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS [J].

HUMLICEK, J ;

GARRIGA, M ;

ALONSO, MI ;

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) :2827-2832

[7] GE0.2SI0.8/SI BRAGG-REFLECTOR MIRRORS FOR OPTOELECTRONIC DEVICE APPLICATIONS [J].

KUCHIBHOTLA, R ;

CAMPBELL, JC ;

BEAN, JC ;

PETICOLAS, L ;

HULL, R .

APPLIED PHYSICS LETTERS, 1993, 62 (18) :2215-2217

[8] LOW-VOLTAGE HIGH-GAIN RESONANT-CAVITY AVALANCHE PHOTODIODE [J].

KUCHIBHOTLA, R ;

SRINIVASAN, A ;

CAMPBELL, JC ;

LEI, C ;

DEPPE, DG ;

HE, YS ;

STREETMAN, BG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) :354-356

[9] SURFACE EMITTING LASER DIODE WITH ALXGA1-XAS/GAAS MULTILAYERED HETEROSTRUCTURE [J].

OGURA, M ;

YAO, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :784-787

[10] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J].

PEARSALL, TP ;

TEMKIN, H ;

BEAN, JC ;

LURYI, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :330-332