BISTABILITY IN 2-MODE SEMICONDUCTOR-LASERS VIA GAIN SATURATION

被引：66

作者：

TANG, CL

SCHREMER, A

FUJITA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 18期

关键词：

D O I：

10.1063/1.98686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1392 / 1394

页数：3

共 9 条

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APPLIED PHYSICS LETTERS, 1987, 51 (06) :392-394

[3] BISTABLE OUTPUT CHARACTERISTICS IN SEMICONDUCTOR-LASER INJECTION LOCKING [J].

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MATSUOKA, T ;

OTSUKA, K .

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[5] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].

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[7]

Mori Y., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P610

[8]

SHIMODA K, 1984, INTRO LASER PHYSICS, P187

[9]

UENO M, 1985, J APPL PHYS, V19, P1689

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