ROLE OF 2-PHOTON ABSORPTION IN ULTRAFAST SEMICONDUCTOR OPTICAL SWITCHING DEVICES

被引：51

作者：

AITCHISON, JS

OLIVER, MK

KAPON, E

COLAS, E

SMITH, PWE

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the two-photon absorption coefficient of GaAs optical waveguide structures at 1.06 μm. We show that for pulse lengths longer than ∼1 ps, light-induced index changes sufficient to induce all-optical switching will be predominantly due to carriers generated by two-photon absorption. These results allow us to predict limitations for ultrafast all-optical GaAs devices.

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收藏

页码：1305 / 1307

页数：3

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