APPLICATION OF GUNN-EFFECT TO SUBNANOSECOND FULL ADDER AND FULL SUBTRACTOR

被引：7

作者：

ISOBE, T ^{[1
]}

NAKAMURA, T ^{[1
]}

GOTO, G ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1109/PROC.1973.9159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：792 / 793

页数：2

共 7 条

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HARTNAGEL, HL ;

IZADPANA.SH .

RADIO AND ELECTRONIC ENGINEER, 1968, 36 (04) :247-+

[2] HIGH-SPEED ADDER USING GUNN DIODES [J].

KATAOKA, S ;

KOMAMIYA, K ;

MORISUE, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1526-&

[3]

KATAOKA S, 1971, NAT C I ELEC ENG JAP

[4]

KOMAMIYA Y, 1971, NAT C I ELEC ENG JAP

[5] THEORY OF TRANSVERSE EXTENSION OF GUNN DOMAINS [J].

SHOJI, M .

[6]

SUGETA T, 1970, IEEE T ELECTRON DEVI, VED17, P940

[7]

TOMIZAWA K, 1970, ELECTRON LETT, V7, P239