ELECTRON-BEAM FABRICATION OF ION-IMPLANTED HIGH-PERFORMANCE FET CIRCUITS

[1] BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844

[2] CRAWFORD RH, 1972, ELECTRONICS, V45, P85

[3] FANG FF, 1970, INT ELECTRON DEVICE

[4] HATZAKIS M, 1969, J ELECTROCHEM SOC, V116, P1034

[5] MACDOUGALL J, 1970, ELECTRONICS, V42, P86

[6] ELECTRON BEAM FABRICATION OF MICRON TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 446 - &

[7] THORNLEY RFM, 1970, IEEE T ELECTRON DEVI, VED17, P961

[8] WOLF ED, 1972, IEEE T ELECTRON DEVI, VED19, P624

[1] BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844

[2] CRAWFORD RH, 1972, ELECTRONICS, V45, P85

[3] FANG FF, 1970, INT ELECTRON DEVICE

[4] HATZAKIS M, 1969, J ELECTROCHEM SOC, V116, P1034

[5] MACDOUGALL J, 1970, ELECTRONICS, V42, P86

[6] ELECTRON BEAM FABRICATION OF MICRON TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 446 - &

[7] THORNLEY RFM, 1970, IEEE T ELECTRON DEVI, VED17, P961

[8] WOLF ED, 1972, IEEE T ELECTRON DEVI, VED19, P624