NEAR BAND EDGE PHOTOACOUSTIC SPECTRA OF GAAS BELOW ROOM-TEMPERATURE

被引：4

作者：

IKARI, T

YOKOYAMA, H

MAEDA, K

FUTAGAMI, K

机构：

[1] Department of Electronics, Miyazaki University

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 01期

关键词：

D O I：

10.1002/pssa.2211210169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K125 / K127

页数：3

共 6 条

[1]

Ikari T., 1987, Photoacoustic and thermal wave phenomena in semiconductors, P397

[2] LOW-TEMPERATURE PHOTOACOUSTIC MEASUREMENTS BY A TRANSDUCER TECHNIQUE [J].

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SHIGETOMI, S ;

KOGA, Y ;

SHIGETOMI, S .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (01) :17-19

[3] LOW-TEMPERATURE PHOTOACOUSTIC SPECTRA OF BII3 SINGLE-CRYSTALS [J].

IKARI, T ;

SHIGETOMI, S ;

KOGA, Y ;

NISHIMURA, H ;

YAYAMA, H ;

TOMOKIYO, A .

PHYSICAL REVIEW B, 1988, 37 (02) :886-890

[4] PIEZOELECTRIC PHOTOACOUSTIC DETECTION - THEORY AND EXPERIMENT [J].

JACKSON, W ;

AMER, NM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3343-3353

[5]

Mikoshiba N., 1987, Photoacoustic and thermal wave phenomena in semiconductors, P53

[6] INVESTIGATION OF NONRADIATIVE STATES IN GAAS AND INP BY PHOTOACOUSTIC-SPECTROSCOPY [J].

WASA, K ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :L653-L656

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