学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ROLE OF HIGHER SILANES IN THE PLASMA-INDUCED DEPOSITION OF AMORPHOUS-SILICON FROM SILANE
被引:15
作者
:
论文数:
引用数:
h-index:
机构:
HEINTZE, M
[
1
]
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ZURICH,INST INORGAN CHEM,CH-8057 ZURICH,SWITZERLAND
UNIV ZURICH,INST INORGAN CHEM,CH-8057 ZURICH,SWITZERLAND
VEPREK, S
[
1
]
机构
:
[1]
UNIV ZURICH,INST INORGAN CHEM,CH-8057 ZURICH,SWITZERLAND
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 54卷
/ 14期
关键词
:
D O I
:
10.1063/1.100703
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1320 / 1322
页数:3
相关论文
共 16 条
[1]
REACTIVE STICKING COEFFICIENTS FOR SILANE AND DISILANE ON POLYCRYSTALLINE SILICON
[J].
BUSS, RJ
论文数:
0
引用数:
0
h-index:
0
BUSS, RJ
;
HO, P
论文数:
0
引用数:
0
h-index:
0
HO, P
;
BREILAND, WG
论文数:
0
引用数:
0
h-index:
0
BREILAND, WG
;
COLTRIN, ME
论文数:
0
引用数:
0
h-index:
0
COLTRIN, ME
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(08)
:2808
-2819
[2]
HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY
[J].
CURTINS, H
论文数:
0
引用数:
0
h-index:
0
CURTINS, H
;
WYRSCH, N
论文数:
0
引用数:
0
h-index:
0
WYRSCH, N
;
SHAH, AV
论文数:
0
引用数:
0
h-index:
0
SHAH, AV
.
ELECTRONICS LETTERS,
1987,
23
(05)
:228
-230
[3]
INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION
[J].
CURTINS, H
论文数:
0
引用数:
0
h-index:
0
CURTINS, H
;
WYRSCH, N
论文数:
0
引用数:
0
h-index:
0
WYRSCH, N
;
FAVRE, M
论文数:
0
引用数:
0
h-index:
0
FAVRE, M
;
SHAH, AV
论文数:
0
引用数:
0
h-index:
0
SHAH, AV
.
PLASMA CHEMISTRY AND PLASMA PROCESSING,
1987,
7
(03)
:267
-273
[4]
DOMINANT REACTION CHANNELS AND THE MECHANISM OF SILANE DECOMPOSITION IN A H2-SI(S)-SIH4 GLOW-DISCHARGE
[J].
ENSSLEN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
ENSSLEN, K
;
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
VEPREK, S
.
PLASMA CHEMISTRY AND PLASMA PROCESSING,
1987,
7
(02)
:139
-153
[5]
NEUTRAL RADICAL DEPOSITION FROM SILANE DISCHARGES
[J].
GALLAGHER, A
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, A
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(07)
:2406
-2413
[6]
SILICON HYDRIDE ETCH PRODUCTS FROM THE REACTION OF ATOMIC-HYDROGEN WITH SI(100)
[J].
GATES, SM
论文数:
0
引用数:
0
h-index:
0
GATES, SM
;
KUNZ, RR
论文数:
0
引用数:
0
h-index:
0
KUNZ, RR
;
GREENLIEF, CM
论文数:
0
引用数:
0
h-index:
0
GREENLIEF, CM
.
SURFACE SCIENCE,
1989,
207
(2-3)
:364
-384
[7]
ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE
[J].
GATES, SM
论文数:
0
引用数:
0
h-index:
0
GATES, SM
.
SURFACE SCIENCE,
1988,
195
(1-2)
:307
-329
[8]
HEINTZE M, UNPUB
[9]
ABSOLUTE RATE CONSTANTS FOR THE REACTION OF SILYLENE WITH HYDROGEN, SILANE, AND DISILANE
[J].
JASINSKI, JM
论文数:
0
引用数:
0
h-index:
0
JASINSKI, JM
;
CHU, JO
论文数:
0
引用数:
0
h-index:
0
CHU, JO
.
JOURNAL OF CHEMICAL PHYSICS,
1988,
88
(03)
:1678
-1687
[10]
DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE
[J].
LONGEWAY, PA
论文数:
0
引用数:
0
h-index:
0
LONGEWAY, PA
;
ESTES, RD
论文数:
0
引用数:
0
h-index:
0
ESTES, RD
;
WEAKLIEM, HA
论文数:
0
引用数:
0
h-index:
0
WEAKLIEM, HA
.
JOURNAL OF PHYSICAL CHEMISTRY,
1984,
88
(01)
:73
-77
←
1
2
→
共 16 条
[1]
REACTIVE STICKING COEFFICIENTS FOR SILANE AND DISILANE ON POLYCRYSTALLINE SILICON
[J].
BUSS, RJ
论文数:
0
引用数:
0
h-index:
0
BUSS, RJ
;
HO, P
论文数:
0
引用数:
0
h-index:
0
HO, P
;
BREILAND, WG
论文数:
0
引用数:
0
h-index:
0
BREILAND, WG
;
COLTRIN, ME
论文数:
0
引用数:
0
h-index:
0
COLTRIN, ME
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(08)
:2808
-2819
[2]
HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY
[J].
CURTINS, H
论文数:
0
引用数:
0
h-index:
0
CURTINS, H
;
WYRSCH, N
论文数:
0
引用数:
0
h-index:
0
WYRSCH, N
;
SHAH, AV
论文数:
0
引用数:
0
h-index:
0
SHAH, AV
.
ELECTRONICS LETTERS,
1987,
23
(05)
:228
-230
[3]
INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION
[J].
CURTINS, H
论文数:
0
引用数:
0
h-index:
0
CURTINS, H
;
WYRSCH, N
论文数:
0
引用数:
0
h-index:
0
WYRSCH, N
;
FAVRE, M
论文数:
0
引用数:
0
h-index:
0
FAVRE, M
;
SHAH, AV
论文数:
0
引用数:
0
h-index:
0
SHAH, AV
.
PLASMA CHEMISTRY AND PLASMA PROCESSING,
1987,
7
(03)
:267
-273
[4]
DOMINANT REACTION CHANNELS AND THE MECHANISM OF SILANE DECOMPOSITION IN A H2-SI(S)-SIH4 GLOW-DISCHARGE
[J].
ENSSLEN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
ENSSLEN, K
;
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
UNIV ZURICH,INST INORGAN CHEM,WINTERTHURERSTR 190,CH-8057 ZURICH,SWITZERLAND
VEPREK, S
.
PLASMA CHEMISTRY AND PLASMA PROCESSING,
1987,
7
(02)
:139
-153
[5]
NEUTRAL RADICAL DEPOSITION FROM SILANE DISCHARGES
[J].
GALLAGHER, A
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, A
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(07)
:2406
-2413
[6]
SILICON HYDRIDE ETCH PRODUCTS FROM THE REACTION OF ATOMIC-HYDROGEN WITH SI(100)
[J].
GATES, SM
论文数:
0
引用数:
0
h-index:
0
GATES, SM
;
KUNZ, RR
论文数:
0
引用数:
0
h-index:
0
KUNZ, RR
;
GREENLIEF, CM
论文数:
0
引用数:
0
h-index:
0
GREENLIEF, CM
.
SURFACE SCIENCE,
1989,
207
(2-3)
:364
-384
[7]
ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE
[J].
GATES, SM
论文数:
0
引用数:
0
h-index:
0
GATES, SM
.
SURFACE SCIENCE,
1988,
195
(1-2)
:307
-329
[8]
HEINTZE M, UNPUB
[9]
ABSOLUTE RATE CONSTANTS FOR THE REACTION OF SILYLENE WITH HYDROGEN, SILANE, AND DISILANE
[J].
JASINSKI, JM
论文数:
0
引用数:
0
h-index:
0
JASINSKI, JM
;
CHU, JO
论文数:
0
引用数:
0
h-index:
0
CHU, JO
.
JOURNAL OF CHEMICAL PHYSICS,
1988,
88
(03)
:1678
-1687
[10]
DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE
[J].
LONGEWAY, PA
论文数:
0
引用数:
0
h-index:
0
LONGEWAY, PA
;
ESTES, RD
论文数:
0
引用数:
0
h-index:
0
ESTES, RD
;
WEAKLIEM, HA
论文数:
0
引用数:
0
h-index:
0
WEAKLIEM, HA
.
JOURNAL OF PHYSICAL CHEMISTRY,
1984,
88
(01)
:73
-77
←
1
2
→