EXPERIMENTAL-DETERMINATION OF THE X6 SHEAR TETRAGONAL DEFORMATION POTENTIAL OF ALAS

被引：14

作者：

CHARBONNEAU, S

YOUNG, JF

COLERIDGE, PT

KETTLES, B

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.44.8312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The X6 shear tetragonal deformation potential of AlAs, E2, is estimated by studying the effect of uniaxial stress on the time-resolved photoluminescence spectra from two type-II AlAs/Al0.15Ga0.85As superlattices at 5 K. The time-resolved technique provides a direct measure of the energy separation of excitons associated with the in-plane and out-of-plane X valleys in the AlAs, thus removing complications due to the stress dependence of the valence-band energy. The value of E2 obtained from two samples with different layer thicknesses is 5.8 +/- 0.1 eV.

引用

页码：8312 / 8314

页数：3

共 19 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] CHARBONNEAU S, 1990, P SOC PHOTO-OPT INS, V1283, P23, DOI 10.1117/12.20725
[3] NATURE OF THE LOWEST CONFINED ELECTRON STATE IN GAAS ALAS TYPE-II QUANTUM-WELLS AS A FUNCTION OF ALAS THICKNESS
DAWSON, P
FOXON, CT
VANKESTEREN, HW
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (01) : 54 - 59
[4] EXCITON-STATES IN TYPE-I AND TYPE-II GAAS GA1-XALXAS SUPERLATTICES
DIGNAM, MM
SIPE, JE
[J]. PHYSICAL REVIEW B, 1990, 41 (05): : 2865 - 2878
[5] SUBPICOSECOND REAL-SPACE CHARGE-TRANSFER IN TYPE-II GAAS/ALAS SUPERLATTICES
FELDMANN, J
SATTMANN, R
GOBEL, EO
KUHL, J
HEBLING, J
PLOOG, K
MURALIDHARAN, R
DAWSON, P
FOXON, CT
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (16) : 1892 - 1895
[6] OPTICAL-PROPERTIES AND BAND-STRUCTURE OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
FINKMAN, E
STURGE, MD
MEYNADIER, MH
NAHORY, RE
TAMARGO, MC
HWANG, DM
CHANG, CC
[J]. JOURNAL OF LUMINESCENCE, 1987, 39 (02) : 57 - 74
[7] REFLECTANCE SPECTROSCOPY ON GAAS-GA0.5AL0.5AS SINGLE QUANTUM WELLS UNDER INPLANE UNIAXIAL-STRESS AT LIQUID-HELIUM TEMPERATURE
GIL, B
LEFEBVRE, P
MATHIEU, H
PLATERO, G
ALTARELLI, M
FUKUNAGA, T
NAKASHIMA, H
[J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1215 - 1220
[8] EXCITON-STATES IN STRAINED QUANTUM-WELLS
HIROSHIMA, T
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4518 - 4521
[9] EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES
IHM, J
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1068 - 1070
[10] SYMMETRY OF CONDUCTION STATES FOR GAAS-ALAS TYPE-II SUPERLATTICES UNDER UNIAXIAL-STRESS
LEFEBVRE, P
GIL, B
MATHIEU, H
PLANEL, R
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5550 - 5553

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