EFFECTS OF HYDROSTATIC PRESSURE ON THE PIEZORESISTANCE OF SEMICONDUCTORS - I-INSB, P-GE, P-INSB, AND N-GASB

被引：23

作者：

KEYES, RW

POLLAK, M

机构：

来源：

PHYSICAL REVIEW | 1960年 / 118卷 / 04期

关键词：

D O I：

10.1103/PhysRev.118.1001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1001 / 1007

页数：7

共 25 条

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[9] KEYES RW, 1956, J ELECTRONICS, V2, P279
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