ELECTRON AND HOLE ENERGY-LEVELS IN INAS SELF-ASSEMBLED QUANTUM DOTS

被引：187

作者：

MEDEIROSRIBEIRO, G

LEONARD, D

PETROFF, PM

机构：

[1] Materials Department, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 14期

关键词：

D O I：

10.1063/1.113361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance spectroscopy is used to determine the allowed energy levels for electrons and holes in InAs self-assembled quantum dots embedded in GaAs. Using this technique, the relative energy of the electron and hole states is measured with respect to their respective energy band minima in the GaAs. This allows the construction of an energy level diagram for these quantum dots which correlates well with previously observed photoluminescence data. By tuning the device geometry, a fine structure in the electron ground state is revealed and attributed to Coulomb charging effects.© 1995 American Institute of Physics.

引用

页码：1767 / 1769

页数：3

共 10 条

[1]

Chakraborty T., Comm. Cond. Mat. Phys., 16, (1992)

[2]

Ashoori R.C., Stormer H.L., Weiner J.S., Pfeiffer L.N., Baldwin K.W., West K.W., Phys. Rev. Lett., 71, (1993)

[3]

Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M., Appl. Phys. Lett., 63, (1993)

[4]

Moison J.M., Houzay F., Barthe F., Leprince L., Andre E., Vatel O., Appl. Phys. Lett., 64, (1994)

[5]

Ohkouchi S., Ikoma N., Jpn. J. Appl. Phys., 33, (1994)

[6]

Notzel R., Temmyo J., Kamada H., Furuta T., Tamamura T., Appl. Phys. Lett., 65, (1994)

[7]

Fafard S., Leon R., Leonard D., Merz J.L., Petroff P.M., Phys. Rev. B, 50, (1994)

[8]

Marzin J.Y., Gerard J.M., Izrael A., Barrier D., Bastard G., Phys. Rev. Lett., 73, (1994)

[9]

Drexler H., Leonard D., Hansen W., Kotthaus J.P., Petroff P.M., Phys. Rev. Lett., 73, (1994)

[10]

Leonard D., Pond K., Petroff P.M., Phys. Rev. B, 50, (1994)

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