MEASUREMENT OF SCHOTTKY BARRIER EDGE CAPACITANCE CORRECTION

[1] AMRON I, 1967, J ELECTROCHEM TECH, V5, P94

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[4] HILLIBRAND J, 1960, RCA REV, V21, P245

[5] JOHNSCHER AK, 1960, PRINCIPLES SEMICONDU, P107

[6] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &

[1] AMRON I, 1967, J ELECTROCHEM TECH, V5, P94

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[4] HILLIBRAND J, 1960, RCA REV, V21, P245

[5] JOHNSCHER AK, 1960, PRINCIPLES SEMICONDU, P107

[6] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &