THE CURRENT-DENSITY IN A DOUBLE-BARRIER HETEROSTRUCTURE SUBJECTED TO A TRANSVERSE MAGNETIC-FIELD - THE IMPORTANCE OF THE KY-VALUE

被引：4

作者：

CURY, LA ^{[1
]}

CELESTE, A ^{[1
]}

PORTAL, JC ^{[1
]}

机构：

[1] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90296-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1689 / 1693

页数：5

共 8 条

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[2]

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[4] CALCULATION OF THE DIAMAGNETIC SHIFT IN RESONANT-TUNNELING DOUBLE-BARRIER GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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PORTAL, JC .

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[5]

Davies R. A., 1987, Semiconductor Science and Technology, V2, P61, DOI 10.1088/0268-1242/2/1/009

[6] MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS [J].

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[7] TUNNELING IN A FINITE SUPERLATTICE [J].

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[8] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES [J].

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