CRYSTALLINE-AMORPHOUS CONTRAST FORMATION IN THERMALLY CRYSTALLIZED SIC

The crystallization of stoichiometric amorphous (a-) SiC:H films, deposited onto crystalline (c-) Si and highly transparent sapphire substrates, has been investigated. After annealing transparent poly-crystalline material is obtained due to an emerging indirect band gap. Irradiation of the crystallized films with energetic Ar+ ions transforms the films into a heavily absorbing amorphous state. Possible applications of this effect with regard to sub-micron lithography and to high-density optical storage are pointed out.