A SEMICONDUCTOR CURRENT LIMITER

被引：14

作者：

WARNER, RM

JACKSON, WH

DOUCETTE, EI

STONE, HA

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1959年 / 47卷 / 01期

关键词：

D O I：

10.1109/JRPROC.1959.287107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：44 / 56

页数：13

共 11 条

[1] TECHNIQUE FOR CONNECTING ELECTRICAL LEADS TO SEMICONDUCTORS [J].

ANDERSON, OL ;

CHRISTENSEN, H ;

ANDREATCH, P .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :923-923

[2]

ATALLA MM, 1958, APR M EL SOC NEW YOR

[3]

BUCK TM, 1958, APR M EL CHEM SOC NE

[4]

COBLENZ A, 1957, ELECTRONICS, V30, P144

[5] UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979

[6] THE FIELD EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189

[7] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].

FROSCH, CJ ;

DERICK, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552

[8]

PEARSON GL, 1953, PHYS REV, V90, P336

[9] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[10] MODULATION OF CONDUCTANCE OF THIN FILMS OF SEMI-CONDUCTORS BY SURFACE CHARGES [J].

SHOCKLEY, W ;

PEARSON, GL .

PHYSICAL REVIEW, 1948, 74 (02) :232-233

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