CRYSTAL-GROWTH OF U2D2 SOLID HE-3

被引：22

作者：

NOMURA, R

HENSLEY, HH

MATSUSHITA, T

MIZUSAKI, T

机构：

[1] Department of Physics, Kyoto University, Kyoto

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1994年 / 94卷 / 5-6期

关键词：

D O I：

10.1007/BF00753822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the growth rate of single crystal U2D2 solid He-3 in the superfluid B phase as a function of chemical potential difference DELTAmu between the solid and liquid for temperatures between 0.4 and 0.9 T(N). The growth rate was not proportional to DELTAmu, with very slow growth rates for DELTAmu less than about 10 erg/cm3. For larger values of DELTAmu the growth rate depended weakly on temperature and the growth was attributed to a quantum growth mechanism due to screw dislocations. The melting rate was too fast to be measured quantitatively, but was slower at higher temperatures

引用

页码：377 / 383

页数：7

共 18 条

[1] MOBILITY OF THE HE-3 CRYSTAL-LIQUID INTERFACE AT THE MINIMUM OF THE MELTING CURVE [J].