EFFECT OF THERMAL TREATMENT ON HALL MOBILITY IN THIN VANADIUM FILMS

被引：3

作者：

JAIN, SC

CHANDER, R

机构：

[1] Solid State Physics Laboratory, Delhi

[2] National Physical Laboratory, New Delhi

来源：

关键词：

D O I：

10.1016/0040-6090(69)90049-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：R11 / &

共 7 条

BELSER, RB ;

HICKLIN, WH .

[2] ELECTRICAL CONDUCTIVITY AND HALL EFFECT IN THIN VANADIUM FILMS [J].

CHANDER, R ;

HOWARD, RE ;

JAIN, SC .

[3]

CHANDER R, 1967, INDIAN J PURE AP PHY, V5, P397

[4] TRANSPORT PROPERTIES OF SPUTTERED VANADIUM DIOXIDE THIN FILMS [J].

HENSLER, DH .

[5] TEMPERATURE COEFFICIENT OF RESISTANCE IN THIN VANADIUM FILMS [J].

JAIN, SC ;

CHANDER, R .

[6] ON THE THEORY OF THE HALL EFFECT [J].

KOPPE, H ;

BRYAN, JM .

Vand, V .

PROCEEDINGS OF THE PHYSICAL SOCIETY, 1943, 55 :0222-0246