EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O4 + V2O3

被引:57
作者
MINOMURA, S
NAGASAKI, H
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10.1143/JPSJ.19.131
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O4 [物理学];
学科分类号
0702 ;
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页码:131 / +
页数:1
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[1]   The heat capacities of vanadium, vanadium trioxide, vanadium tetroxide and vanadium pentoxide at low temperatures [J].
Anderson, CT .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1936, 58 :564-566
[2]   STUDIES ON VANADIUM OXIDES .2. THE CRYSTAL STRUCTURE OF VANADIUM DIOXIDE [J].
ANDERSSON, G .
ACTA CHEMICA SCANDINAVICA, 1956, 10 (04) :623-628
[3]   EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O3 [J].
AUSTIN, IG .
PHILOSOPHICAL MAGAZINE, 1962, 7 (78) :961-+
[4]   HIGH PRESSURE ELECTRICAL RESISTANCE CELL, AND CALIBRATION POINTS ABOVE 100 KILOBARS [J].
BALCHAN, AS ;
DRICKAMER, HG .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (03) :308-&
[5]  
KAWAKUBO T, PRIVATE COMMUNICATIO
[6]   OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].
MORIN, FJ .
PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36
[7]   LOW-TEMPERATURE X-RAY DIFFRACTION STUDIES ON VANADIUM SESQUIOXIDE [J].
WAREKOIS, EP .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :S346-S347