IMPURITY CONDUCTION IN CADMIUM SULFIDE AT LOW TEMPERATURES

被引:49
作者
TOYOTOMI, S
MORIGAKI, K
机构
[1] The Institute for Solid State Physics, The University of Tokyo, Tokyo, Roppongi
关键词
D O I
10.1143/JPSJ.25.807
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Impurity conduction has been investigated in three types of cadmium sulfide crystals, that is, Cl-doped cadmium sulfide, undoped cadmium sulfide grown from the vapour phase, and undoped cadmium sulfide grown by the melt. The crystals of Cl-doped cadmium sulfide exhibit the characteristics of impurity conduction at low temperatures which are similar to those of n-type germanium and n-type silicon: A metallic impurity conduction occurs above the excess donor concentration of 2×1018 cm-3. The concentration range between 4×1016 cm-3 and 2×1018 cm-3 is intermediate between metallic type and non-metallic one. A negative magnetoresistance effect is observed at the excess donor concentrations above 2×1018 cm-3 in the temperature range from 1.5°K to 4.2°K. © 1968, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
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页码:807 / &
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