MESH EMITTER TRANSISTOR

被引：4

作者：

FUKUTA, M

KISAKI, H

MAEKAWA, SI

机构：

[1] Semiconductor Engrg. Div., Kobe Industries Corp., Kobe

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 04期

关键词：

D O I：

10.1109/PROC.1968.6366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a new transistor called a mesh emitter transistor (MET) which is designed for high power in a high-frequency range. The output of 10 watts at 400 MHz was obtained with 7 dB gain and 50 percent efficiency in spite of a small collector area of 0.16 mm2. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：742 / &