EPITAXIAL-GROWTH OF PB1-XGEXTE FILMS AND OF PBTE/PB1-XGEXTE SUPERLATTICES

[1] DIFFUSED JUNCTION PHOTOVOLTAIC INFRARED DETECTORS USING PB1-XGEXTE WITH 0.05 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.11 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 576 - 577

[2] MAGNETO-OPTICAL INVESTIGATIONS OF PHASE-TRANSITION-INDUCED BAND-STRUCTURE CHANGES OF PB1-XGEXTE [J]. PHYSICAL REVIEW B, 1985, 31 (12) : 7958 - 7978

[3] BATES S, IN PRESS

[4] PRECISION LATTICE CONSTANT DETERMINATION [J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (10): : 814 - 818

[5] PARTIAL PRESSURES IN EQUILIBRIUM WITH GROUP 4 TELLURIDES .1. OPTICAL ABSORPTION METHOD + RESULTS FOR PBTE [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (11) : 3230 - &

[6] Ch'un-Hua L, 1962, RUSS J INORG CHEM, V7, P496

[7] DETERMINATION OF BAND OFFSETS USING THE PHOTOVOLTAIC EFFECT - APPLICATION TO THE PBS/PBSE HETEROSTRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 419 - 421

[8] GROWTH AND CHARACTERIZATION OF PBTE EPITAXIAL-FILMS GROWN BY HOT-WALL EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 251 - 256

[9] HOT-WALL EPITAXY SYSTEM FOR THE GROWTH OF MULTILAYER IV-VI-COMPOUND HETEROSTRUCTURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (06) : 685 - 689

[10] FANTNER EJ, 1984, ADV XRAY ANAL, V27, P171

[1] DIFFUSED JUNCTION PHOTOVOLTAIC INFRARED DETECTORS USING PB1-XGEXTE WITH 0.05 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.11 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 576 - 577

[2] MAGNETO-OPTICAL INVESTIGATIONS OF PHASE-TRANSITION-INDUCED BAND-STRUCTURE CHANGES OF PB1-XGEXTE [J]. PHYSICAL REVIEW B, 1985, 31 (12) : 7958 - 7978

[3] BATES S, IN PRESS

[4] PRECISION LATTICE CONSTANT DETERMINATION [J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (10): : 814 - 818

[5] PARTIAL PRESSURES IN EQUILIBRIUM WITH GROUP 4 TELLURIDES .1. OPTICAL ABSORPTION METHOD + RESULTS FOR PBTE [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (11) : 3230 - &

[6] Ch'un-Hua L, 1962, RUSS J INORG CHEM, V7, P496

[7] DETERMINATION OF BAND OFFSETS USING THE PHOTOVOLTAIC EFFECT - APPLICATION TO THE PBS/PBSE HETEROSTRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 419 - 421

[8] GROWTH AND CHARACTERIZATION OF PBTE EPITAXIAL-FILMS GROWN BY HOT-WALL EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 251 - 256

[9] HOT-WALL EPITAXY SYSTEM FOR THE GROWTH OF MULTILAYER IV-VI-COMPOUND HETEROSTRUCTURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (06) : 685 - 689

[10] FANTNER EJ, 1984, ADV XRAY ANAL, V27, P171