THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS

被引：41

作者：

BARDEEN, J

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1950年 / 29卷 / 04期

关键词：

D O I：

10.1002/j.1538-7305.1950.tb03649.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：469 / 495

页数：27

共 6 条

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BARDEEN, J
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[2] HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS
SHOCKLEY, W
PEARSON, GL
HAYNES, JR
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 344 - 366
[3] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[4] SUHL H, 1948, PHYS REV, V74, P232
[5] TORREY HC, 1949, CRYSTAL RECTIFIERS, P372
[6] VANROOSBROECK W, 1950, BELL SYST T, V29