学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES
被引:14
作者
:
CHOUDHURY, ANMM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
CHOUDHURY, ANMM
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
ROBSON, PN
机构
:
[1]
Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
来源
:
ELECTRONICS LETTERS
|
1979年
/ 15卷
/ 09期
关键词
:
Capacitance;
Deep levels;
Hole traps;
III V semiconductors;
Indium compounds;
D O I
:
10.1049/el:19790175
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
The parameters of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4 x 10−13 cm2 have been measured. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:247 / 249
页数:3
相关论文
共 7 条
[1]
BHATTACHARYA PK, 1978, THESIS U SHEFFIELD
[2]
PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
CHIAO, SH
论文数:
0
引用数:
0
h-index:
0
CHIAO, SH
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
: 466
-
468
[3]
CHOUDHURY ANN, 1978, P INT S GAAS
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[5]
HOLE MASS MEASUREMENT IN PARA-TYPE INP AND GAP BY SUBMILLIMETER CYCLOTRON-RESONANCE IN PULSED MAGNETIC-FIELDS
LEOTIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
LEOTIN, J
BARBASTE, R
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
BARBASTE, R
ASKENAZY, S
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
ASKENAZY, S
SKOLNICK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
SKOLNICK, MS
STRADLING, RA
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
STRADLING, RA
TUCHENDLER, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
TUCHENDLER, J
[J].
SOLID STATE COMMUNICATIONS,
1974,
15
(04)
: 693
-
697
[6]
Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9
[7]
DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
WHITE, AM
GRANT, AJ
论文数:
0
引用数:
0
h-index:
0
GRANT, AJ
DAY, B
论文数:
0
引用数:
0
h-index:
0
DAY, B
[J].
ELECTRONICS LETTERS,
1978,
14
(13)
: 409
-
411
←
1
→
共 7 条
[1]
BHATTACHARYA PK, 1978, THESIS U SHEFFIELD
[2]
PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
CHIAO, SH
论文数:
0
引用数:
0
h-index:
0
CHIAO, SH
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
: 466
-
468
[3]
CHOUDHURY ANN, 1978, P INT S GAAS
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[5]
HOLE MASS MEASUREMENT IN PARA-TYPE INP AND GAP BY SUBMILLIMETER CYCLOTRON-RESONANCE IN PULSED MAGNETIC-FIELDS
LEOTIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
LEOTIN, J
BARBASTE, R
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
BARBASTE, R
ASKENAZY, S
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
ASKENAZY, S
SKOLNICK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
SKOLNICK, MS
STRADLING, RA
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
STRADLING, RA
TUCHENDLER, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB PHYS SOLIDES, 31077 TOULOUSE CEDEX, FRANCE
TUCHENDLER, J
[J].
SOLID STATE COMMUNICATIONS,
1974,
15
(04)
: 693
-
697
[6]
Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9
[7]
DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
WHITE, AM
GRANT, AJ
论文数:
0
引用数:
0
h-index:
0
GRANT, AJ
DAY, B
论文数:
0
引用数:
0
h-index:
0
DAY, B
[J].
ELECTRONICS LETTERS,
1978,
14
(13)
: 409
-
411
←
1
→