HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES

被引:14
作者
CHOUDHURY, ANMM
ROBSON, PN
机构
[1] Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
关键词
Capacitance; Deep levels; Hole traps; III V semiconductors; Indium compounds;
D O I
10.1049/el:19790175
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The parameters of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4 x 10−13 cm2 have been measured. © 1979, The Institution of Electrical Engineers. All rights reserved.
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页码:247 / 249
页数:3
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