HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES

被引：14

作者：

CHOUDHURY, ANMM

ROBSON, PN

机构：

[1] Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 09期

关键词：

Capacitance; Deep levels; Hole traps; III V semiconductors; Indium compounds;

D O I：

10.1049/el:19790175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parameters of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4 x 10−13 cm2 have been measured. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：247 / 249

页数：3

共 7 条

[1] BHATTACHARYA PK, 1978, THESIS U SHEFFIELD
[2] PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
CHIAO, SH
ANTYPAS, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 466 - 468
[3] CHOUDHURY ANN, 1978, P INT S GAAS
[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[5] HOLE MASS MEASUREMENT IN PARA-TYPE INP AND GAP BY SUBMILLIMETER CYCLOTRON-RESONANCE IN PULSED MAGNETIC-FIELDS
LEOTIN, J
BARBASTE, R
ASKENAZY, S
SKOLNICK, MS
STRADLING, RA
TUCHENDLER, J
[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (04) : 693 - 697
[6] Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9
[7] DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES
WHITE, AM
GRANT, AJ
DAY, B
[J]. ELECTRONICS LETTERS, 1978, 14 (13) : 409 - 411

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