STUDY OF THE RESPONSE SPEED OF A HIGH-GAIN A-SIC/A-SI JUNCTION PHOTOSENSOR AND THE SPECTRAL RESPONSE UNDER BIAS LIGHT

被引：2

作者：

YAMAGUCHI, M

KONDO, M

HAYASHI, K

NISHIO, H

TAWADA, Y

机构：

[1] Central Research Lab., Kanegafuchi Chem. Industry Co., Ltd., Hyogo-ku, Kobe, 652, 1-2-80, Yoshida-cho

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80363-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-gain photodiodes using an a-SiC:H(i)/a-Si:H(n)/a-Si:H(i) structure were investigated. A time-dependent two-step response to a light pulse was obtained, and we found that the fast response corresponds to primary photocurrent in the a-Si:H(i) layer and the slow response to secondary current injected from the a-SiC:H/a-Si:H(n) junction. The ratio of the secondary to primary photocurrent varies from 1.0 to 50, according to the impurity level of the a-Si:H layer near the heterojunction and also according to the injected photons in the a-Si:H (i) layer. The secondary photocurrent is controlled by the height and the width of the potential barrier at the blocking layer.

引用

页码：1305 / 1308

页数：4