INJECTION LUMINESCENCE IN GAAS TRANSISTORS (77 TO 300 DEGREES K RECOMBINATION RADIATION E)

被引：3

作者：

NORWOOD, MH

STRACK, H

HUTCHINSON, WG

机构：

来源：

关键词：

D O I：

10.1063/1.1754171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：71 / +

页数：1

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