ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON

被引：8

作者：

ROTH, EP

TSCHULENA, G

SEEGER, K

机构：

来源：

ZEITSCHRIFT FUR PHYSIK | 1968年 / 212卷 / 02期

关键词：

D O I：

10.1007/BF01421915

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：183 / +

页数：1

共 14 条

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