BAND-STRUCTURE OF A SEMIMAGNETIC SEMICONDUCTING ALLOY - A PHOTOEMISSION-STUDY OF CD1-XMNXTE

被引：9

作者：

CHAB, V ^{[1
]}

PAOLUCCI, G ^{[1
]}

PRINCE, KC ^{[1
]}

SURMAN, M ^{[1
]}

BRADSHAW, AM ^{[1
]}

机构：

[1] MAX PLANCK GESELL, FRITZ HABER INST, D-1000 BERLIN 33, GERMANY

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.38.12353

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12353 / 12361

页数：9

共 32 条

[1] CONCENTRATED KONDO SYSTEMS [J].

BRANDT, NB ;

MOSHCHALKOV, VV .

ADVANCES IN PHYSICS, 1984, 33 (05) :373-467

[2]

CHAB V, UNPUB

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].

CHIANG, TC ;

KNAPP, JA ;

AONO, M ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522

[5] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM CDTE(110) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

SCOTT, G .

PHYSICAL REVIEW B, 1981, 24 (06) :3310-3317

[6] STUDIES OF CLEAN AND ADATOM TREATED SURFACES OF II-VI-COMPOUNDS [J].

EBINA, A ;

TAKAHASHI, T .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :51-64

[7]

GALAZKA RR, 1982, LECTURE NOTES PHYSIC, V152, P294

[8] ELECTRONIC-STRUCTURE OF HG1-XCDXTE [J].

HASS, KC ;

EHRENREICH, H ;

VELICKY, B .

PHYSICAL REVIEW B, 1983, 27 (02) :1088-1100

[9]

HYBLER J, COMMUNICATION

[10] ATOMIC GEOMETRIES OF ZINCBLENDE COMPOUND SEMICONDUCTOR SURFACES - SIMILARITIES IN SURFACE REHYBRIDIZATIONS [J].

KAHN, A .

SURFACE SCIENCE, 1986, 168 (1-3) :1-15

← 1 2 3 4 →