ANNEALING OF N-TYPE GAAS UNDER EXCESS ARSENIC VAPOR

被引：37

作者：

OTSUKA, H

ISHIDA, K

NISHIZAWA, JI

机构：

[1] Research Institute of Electrical Communication, Tohoku University

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 05期

关键词：

D O I：

10.1143/JJAP.8.632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：632 / +

页数：1

相关论文

共 7 条

[1] BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
WEISBERG, LR
BUBE, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &
[2] ELECTRICAL ACTIVITY OF COPPER IN GAAS
BLANC, J
WEISBERG, LR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 221 - &
[3] BOLTAKS BI, 1965, FIZ TVERD TELA+, V7, P822
[4] HEAT TREATMENT OF GALLIUM ARSENIDE
EDMOND, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1428 - 1430
[5] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF ZN-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4811 - &
[6] OTSUKA H, 1968, 41 JAP SOC PROM SCIE
[7] OTSUKA H, 1968, ANNUAL M I ELECT COM